Search results for "Breakdown voltage"
showing 10 items of 12 documents
Characterization of SiPM properties at liquid nitrogen temperature
2016
SiPM operation at cryogenic temperatures fails for many common devices. A particular type with deep channels in the silicon substrate instead of quenching resistors was thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating it with low light levels. The devices were mounted in vacuum with the temperature stabilized to allow long-term operation. SiPM signals from a LED pulser were acquired with single-pixel resolution. Generalized fits to the charge collection spectra were used to extract properties like single-pixel gain, inter-pixel variation, breakdown voltage, and photon detection efficiency. With these measurements a deeper investigation of th…
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Tensiostatic studies on formation and breakdown of anodic oxide films on tungsten in acidic chloride solutions
1977
Abstract The anodic behaviour of tungsten in HCl and HCl + KCl solutions has been extensively studied. For each solution, the applied voltage was increased from 1 V up to the breakdown voltage. Values of the current and open circuit voltage decays were recorded. The HCl concentration was varied from 0.05 M to 12 M while appropriate addition to KCl was made to reach assigned molarities of the Cl − ion. The results are discussed and qualitatively interpreted in terms of the different influence of the H + and Cl − ions.
APDs as single-photon detectors for visible and near-infrared wavelengths down to Hz rates
2012
For the SPECTRAP experiment at GSI, Germany, detectors with Single-Photon counting capability in the visible and near-infrared regime are required. For the wavelength region up to 1100 nm we investigate the performance of 2x2 mm^2 avalanche photo diodes (APDs) of type S0223 manufactured by Radiation Monitoring Devices. To minimize thermal noise, the APDs are cooled to approximately -170 deg. C using liquid nitrogen. By operating the diodes close to the breakdown voltage it is possible to achieve relative gains in excess of 2x10^4. Custom-made low noise preamplifiers are used to read out the devices. The measurements presented in this paper have been obtained at a relative gain of 2.2x10^4. …
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
2018
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Preliminary radiation hardness tests of single photon Si detectors
2010
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…